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Figure 5
Measured reflectivity curves of 3 Si(660) and 2 Si(553) SBCAs compared with the predictions of the current and previous work (Honkanen et al., 2014bBB22). The bending radii were 1 m and the wafer thicknesses were 300 µm. The theoretical curves are convolved with contributions from the incident bandwidth and Johann error. The centroid energy and the vertical scale of the curves were adjusted as a group to optimize the fit between the theoretical and experimental curves with a 30 mm aperture.

IUCrJ
Volume 8| Part 1| January 2021| Pages 102-115
ISSN: 2052-2525
https://doi.org/10.1107/S2052252520014165