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Figure 8
Effect of wafer side-length ratio a/b on the energy shift distribution due to transverse strain in an isotropic rectangular crystal. The area of the wafers was kept constant but for visual clarity the curves are normalized to the maximum instead of the integrated area. Poisson's ratio ν = 0.25 was used.

IUCrJ
Volume 8| Part 1| January 2021| Pages 102-115
ISSN: 2052-2525
https://doi.org/10.1107/S2052252520014165