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Figure 9
(Left column) Resolution curves of rectangular wafers for three different reflections of Si with selected in-plane crystal orientations aligned with the x axis in comparison with the isotropic model. Note that for Si(555) the curves overlap and the integer indices for Si(731) in-plane directions are approximate. The dimensions of the wafers were set to 100 mm × 50 mm × 150 µm with the long edges aligned with the x axis. The bending radius was set to 0.5 m and the Bragg angle was 88.5°. The Johann error has been omitted. (Right column) uzz-component of the strain tensor over the crystal surface. Red indicates expansion and blue indicates contraction. Isocurves are marked with solid and dashed black lines.

IUCrJ
Volume 8| Part 1| January 2021| Pages 102-115
ISSN: 2052-2525
https://doi.org/10.1107/S2052252520014165