Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Son, H.; Choi, Y.-; Hong, S.-K.; Park, J.-H.; Jeon, D.-W.

doi:10.1107/S2052252521003389

Figure 1
FE-SEM and AFM (inset) images of surfaces and cross-sections of the α-Ga₂O₃ epilayers grown on (a)–(b) CSS and (c)–(d) CF-PSS. Time evolution of α-Ga₂O₃ epilayers on CF-PSS at growth times of (e)–(f) 5, (g)–(h) 10 and (i)–(j) 15 min.

IUCrJ

Volume 8| Part 3| May 2021| Pages 462-467

ISSN: 2052-2525

https://doi.org/10.1107/S2052252521003389

CHEMISTRY | CRYSTENG

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