Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Son, H.; Choi, Y.-; Hong, S.-K.; Park, J.-H.; Jeon, D.-W.

doi:10.1107/S2052252521003389

Figure 2
XRD spectra from θ–2θ scans of the α-Ga₂O₃ epilayers grown on CSS and CF-PSS; (a) α-Ga₂O₃ epilayers on CF-PSS at different growth times for 5–35 min and (b) after growth.

IUCrJ

Volume 8| Part 3| May 2021| Pages 462-467

ISSN: 2052-2525

https://doi.org/10.1107/S2052252521003389

CHEMISTRY | CRYSTENG

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