Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Son, H.; Choi, Y.-; Hong, S.-K.; Park, J.-H.; Jeon, D.-W.

doi:10.1107/S2052252521003389

Figure 4
(a) High-magnification cross-sectional TEM image of the α-Ga₂O₃ epilayers/α-Al₂O₃ interface viewed along [11–20] axis. Inset diffraction patterns of α-Ga₂O₃ epilayers grown on CF-PSS. (b) Plan-view, (c)–(d) low-magnification cross-sectional TEM image. (e) Schematic of the behavior of TD in the α-Ga₂O₃ epilayer grown on CF-PSS.

IUCrJ

Volume 8| Part 3| May 2021| Pages 462-467

ISSN: 2052-2525

https://doi.org/10.1107/S2052252521003389

CHEMISTRY | CRYSTENG

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