Figure 3
Effect of pattern distortions on unit-cell determination. (a) Typical -oriented diffraction pattern with HOLZ reflections of a silicon specimen. The red dashed circle marks the FOLZ ring used for measuring the reciprocal layer spacing H*. (b) Angle-dependent measured parameters OA1, OB1 and OC1 were extracted from 24 HOLZ reflections, and the dotted curves are the sine-function fitted curves. (c) Determined unit cells by using sets of angularly measured OA1, OB1 and OC1. Where the open symbols in Figs. 3(b)–3(c) represent the measured parameters of the uncorrected pattern, and the solid ones are those of the elliptical-distortion corrected pattern. |