Figure 3
Effect of pattern distortions on unit-cell determination. (a) Typical -oriented diffraction pattern with HOLZ reflections of a silicon specimen. The red dashed circle marks the FOLZ ring used for measuring the reciprocal layer spacing H*. (b) Angle-dependent measured parameters OA1, OB1 and OC1 were extracted from 24 HOLZ reflections, and the dotted curves are the sine-function fitted curves. (c) Determined unit cells by using sets of angularly measured OA1, OB1 and OC1. Where the open symbols in Figs. 3 (b)–3(c) represent the measured parameters of the uncorrected pattern, and the solid ones are those of the elliptical-distortion corrected pattern. |