Vergleichende Untersuchung über die röntgentopographischen Verfahren der Abbildung von Kristalldefekten

Various characteristic lattice defects in silicon have been recorded by some of the main X-ray topographic methods (Bragg and Laue case, scanning- and fixed-crystal techniques, single and double diffraction, hard and soft radiation), with the same specimens used for all methods. The comparison of the results allows some general statements on the qualification (advantages and disadvantages) of each method for detecting and investigating different kinds of lattice defects.