Crystal data for CuGaSe₂

X-ray powder data are presented and analysed for the semiconducting compound CuGaSe₂, single crystals of which were prepared by a zone-growth technique. Values of a = 5.614 and c = 11.022 Å were determined and diffractometer measurements of intensity were used to establish the positions of the atoms in the unit cell. Some Hall effect and resistivity data are reported and these results indicate that the structure contains native defects with concentrations approaching 0.1%.