Buy article online - an online subscription or single-article purchase is required to access this article.
The compounds tetrakis(trimethylsilyl)methane C[Si(CH
3)
3]
4 (TC) and tetrakis(trimethylsilyl)silane Si[Si(CH
3)
3]
4 (TSi) have crystal structures with the molecules in a cubic closed-packed (c.c.p.) stacking. At room temperature both structures have space group
(
Z = 4) with
a = 13.5218 (1) Å,
V = 2472.3 (1) Å
3 for TSi, and
a = 12.8902 (2) Å,
V = 2141.8 (1) Å
3 for TC. X-ray scattering data can be described by a molecule with approximately sixfold orientational disorder, ruling out a structure with free rotating molecules. Upon cooling, TSi exhibits a first-order phase transition at
Tc = 225 K, as is characterized by a jump of the lattice parameter of Δ
a = 0.182 Å and by an exothermal maximum in differential scanning calorimetry (DSC) with Δ
H = 11.7 kJ mol
−1 and Δ
S = 50.0 J mol
−1 K
−1. The structure of the low-temperature phase is refined against X-ray powder data measured at 200 K. It has space group
P213 (
Z = 4),
a = 13.17158 (6) Å and
V = 2285.15 (2) Å
3. The molecules are found to be ordered as a result of steric interactions between neighboring molecules, as is shown by analyzing distances between atoms and by calculations of the lattice energy in dependence on the orientations of the molecules. TC has a phase transition at
Tc1 = 268 K, with Δ
a1 = 0.065 Å, Δ
H1 = 3.63 kJ mol
−1 and Δ
S1 = 13.0 J mol
−1 K
−1. A second first-order phase transition occurs at
Tc2 = 225 K, characterized by Δ
a2 = 0.073 Å, Δ
H2 = 6.9 kJ mol
−1 and Δ
S2 = 30.0 J mol
−1 K
−1. The phase transition at higher temperature has not been reported previously. New NMR experiments show a small anomaly in the temperature dependence of the peak positions in NMR to occur at
Tc2. Rietveld refinements were performed for the low-temperature phase measured at
T = 150 K [space group
P213, lattice parameter
a = 12.609 (3) Å], and for the intermediate phase measured at
T = 260 K [space group
, lattice parameter
a = 12.7876 (1) Å]. The low-temperature phase of TC is formed isostructural to the low-temperature phase of TSi. In the intermediate phase the molecules exhibit a twofold orientational disorder.
Supporting information
| Crystallographic Information File (CIF) Contains datablocks global, TSi295, TSi200, TC295, TC260, TC150 |
| Structure factor file (CIF format) Contains datablock TSi295 |
| Structure factor file (CIF format) Contains datablock TC295 |
| Structure factor file (CIF format) Contains datablock TSi200 |
| Structure factor file (CIF format) Contains datablock TC150 |
| Structure factor file (CIF format) Contains datablock TC260 |
| Text file Supplementary material |
| Text file Supplementary material |
| Text file Supplementary material |
| Text file Supplementary material |
| Text file Supplementary material |
CCDC references: 138568; 138569; 138570; 138571; 138572
Crystal data top
Si(Si(CH3)3)4 | V = 2472.3 (1) Å3 |
Mr = 320.87 | Z = 4 |
Cubic, Fm3m | Dx = 0.862 Mg m−3 |
Hall symbol: -F 4 2 3 | Synchrotron radiation, λ = 1.14946 (2) Å |
a = 13.5218 (1) Å | T = 295 K |
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top | x | y | z | Uiso*/Ueq | Occ. (<1) |
Si | 0.0 | 0.0 | 0.0 | 0.203 (13) | |
Si(1) | 0.028 (2) | 0.086 (1) | 0.154 (1) | 0.203 (13) | |
C(1) | 0.072 (3) | 0.130 (3) | 0.228 (4) | 0.203 (13) | 1.25 (5) |
C(2) | 0.113 (3) | 0.168 (2) | 0.168 (2) | 0.203 (13) | 1.25 (5) |
C(3) | 0.038 (1) | 0.038 (1) | 0.256 (2) | 0.203 (13) | 1.25 (5) |
Crystal data top
Si(Si(CH3)3)4 | V = 2285.15 (2) Å3 |
Mr = 320.87 | Z = 4 |
Cubic, P213 | Dx = 0.932 Mg m−3 |
Hall symbol: P 2ac 2ab 3 | Synchrotron radiation, λ = 1.14946 (2) Å |
a = 13.17158 (6) Å | T = 200 K |
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top | x | y | z | Uiso*/Ueq | |
Si(0) | 0.0048 | 0.0048 | 0.0048 | 0.0279 (5) | |
Si(1) | 0.1072 (2) | 0.1072 (2) | 0.1072 (2) | 0.0279 (5) | |
Si(2) | 0.0661 (2) | −0.1602 (2) | 0.0078 (2) | 0.0279 (5) | |
C(11) | 0.2452 (3) | 0.0899 (5) | 0.0877 (4) | 0.119 (2) | |
C(21) | 0.1134 (5) | −0.1936 (5) | 0.1436 (4) | 0.119 (2) | |
C(22) | −0.0361 (5) | −0.2510 (4) | −0.0396 (6) | 0.119 (2) | |
C(23) | 0.1905 (5) | −0.1711 (6) | −0.0710 (4) | 0.119 (2) | |
Crystal data top
C(Si(CH3)3)4 | V = 2141.8 (1) Å3 |
Mr = 304.79 | Z = 4 |
Cubic, Fm3m | Dx = 0.945 Mg m−3 |
Hall symbol: -F 4 2 3 | Synchrotron radiation, λ = 0.82488 (2) Å |
a = 12.8902 (1) Å | T = 295 K |
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top | x | y | z | Uiso*/Ueq | Occ. (<1) |
C(0) | 0 | 0 | 0 | 0.101 (13) | |
Si(1) | 0.021 (3) | 0.073 (2) | 0.130 (2) | 0.15 (3) | |
C(1) | 0.067 (4) | 0.126 (4) | 0.225 (5) | 0.101 (13) | 1.35 (8) |
C(2) | 0.114 (3) | 0.157 (2) | 0.157 (2) | 0.101 (13) | 1.35 (8) |
C(3) | 0.039 (2) | 0.039 (2) | 0.240 (3) | 0.101 (13) | 1.35 (8) |
Crystal data top
C(Si(CH3)3)4 | V = 2091.0 (1) Å3 |
Mr = 304.79 | Z = 4 |
Cubic, Pa3 | Dx = 0.968 Mg m−3 |
Hall symbol: -P 2ac 2ab 3 | Synchrotron radiation, λ = 0.82488 (2) Å |
a = 12.7876 (1) Å | T = 260 K |
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top | x | y | z | Uiso*/Ueq | Occ. (<1) |
C(0) | 0.0 | 0.0 | 0.0 | 0.265 (19) | |
Si(1) | 0.0847 (3) | 0.0847 (3) | 0.0847 (3) | 0.317 (8) | 0.5 |
Si(2) | 0.0352 (10) | −0.1415 (6) | −0.0073 (17) | 0.317 (8) | 0.5 |
C(11) | 0.2172 (7) | 0.0166 (13) | 0.1032 (14) | 0.174 (3) | 0.75 |
C(21) | 0.113 (2) | −0.1878 (15) | 0.1119 (18) | 174 (3) | 0.75 |
C(22) | −0.0370 (13) | −0.2667 (7) | −0.0511 (11) | 174 (3) | 0.75 |
C(23) | 0.1467 (17) | −0.1474 (14) | −0.107 (2) | 174 (3) | 0.75 |
Crystal data top
C(Si(CH3)3)4 | V = 2005 (1) Å3 |
Mr = 304.79 | Z = 4 |
Cubic, P213 | Dx = 1.01 Mg m−3 |
Hall symbol: P 2ac 2ab 3 | Synchrotron radiation, λ = 0.82488 (2) Å |
a = 12.609 (3) Å | T = 150 K |
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top | x | y | z | Uiso*/Ueq | |
C(0) | 0.0 | 0.0 | 0.0 | 0.252 (19) | |
Si(1) | 0.0881 (2) | 0.0881 (2) | 0.0881 (2) | 0.0252 (9) | |
Si(2) | 0.0548 (2) | −0.1425 (2) | −0.0005 (3) | 0.0252 (9) | |
C(11) | 0.2380 (3) | 0.0500 (7) | 0.0666 (7) | 0.0252 (9) | |
C(21) | 0.0966 (5) | −0.1785 (3) | 0.1495 (4) | 0.0252 (9) | |
C(22) | −0.0417 (5) | −0.2425 (2) | −0.0548 (5) | 0.0252 (9) | |
C(23) | 0.1905 (4) | −0.1418 (4) | −0.0846 (5) | 0.0252 (9) | |
Subscribe to Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials
The full text of this article is available to subscribers to the journal.
If you have already registered and are using a computer listed in your registration details, please email
support@iucr.org for assistance.