Identification of {20} and {100} Laue patterns of hexagonal and rhombohedral silicon carbide polytypes

The development of epitaxic and bulk-grown semiconductor SiC exhibiting uniform polytype phase homogeneity is critically dependent upon the accurate identification of crystallographic orientations corresponding to the desired polytype. In this paper, experimental transmission Laue photographs as well as computer-generated transmission Laue patterns are presented for {20} and {100} faces of the 4H, 6H and 15R polytypes of silicon carbide. The transmission patterns permit easy recognition of polytypes and crystal orientations.