Imaging of interstitial atoms in Ga_1-xMn_xAs layers by means of X-ray diffuse scattering

The local atomic structure of a Ga_1-xMn_xAs (x = 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell.