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Complete numerical simulations of X-ray back-reflection Laue-grams have been carded out. The main factors that affect the intensities of Laue-gram spots have been evaluated. The proposed procedure is general and can be applied to any crystalline material and for any kind of detector and radiation source. The computational requirements are minimal and inexpensive. Excellent agreement between the experimental and the simulated Laue-grams are observed. To demonstrate the potential of these procedures, the case of LiNbO3 is presented here. Exact replication of the Laue-gram for LiNbO3 has been obtained.
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