Accuracy in X-ray rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantation

Rocking curves of implanted and annealed silicon wafers obtained from an X-ray double-crystal configuration are simulated on the basis of the dynamical theory of diffraction from imperfect crystals. It is shown that after an amorphous-to-crystal transition of the surface damaged layer, vacancy- and interstitial-type defects are detected in this layer in distinct regions, provided the experimental intensity profile and its simulation are accurate enough. The results obtained are compared with those predicted by theoretical modelling of defect production under bombardment.