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Two X-ray methods in back-reflection geometry (diffraction techniques with Ni Kα or Cu Kα radiation and the Laue technique with 'white' radiation) were used for the polytype examination of SiC bulk crystals. The first method is useful for detecting polytypes with equipment such as a three-circle or four-circle diffractometer. We suggest a special procedure to search for certain family (polytype insensitive) and polytype-sensitive reflections. The second method is suitable for Laue camera equipment with an X-ray image intensifier tube or adequate imaging systems. The observed Laue diagrams are compared with computer simulations.
