High-Resolution High-Count-Rate X-ray Spectroscopy with State-of-the-Art Silicon Detectors

Strüder, L.; Fiorini, C.; Gatti, E.; Hartmann, R.; Holl, P.; Krause, N.; Lechner, P.; Longoni, A.; Lutz, G.; Kemmer, J.; Meidinger, N.; Popp, M.; Soltau, H.; Weber, U.; Zanthier, C. von

doi:10.1107/S0909049597014052

Journal of Synchrotron Radiation Journal of
Synchrotron Radiation

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Figure 1
Central area of a cylindrical silicon drift chamber with an integrated amplifier for spectroscopic applications. The entire silicon wafer is sensitive to radiation.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 5| Part 3| May 1998| Pages 268-274

https://doi.org/10.1107/S0909049597014052

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