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Figure 3
Stability of a PtSi/Si Schottky barrier diode (closed circles) and an AXUV n-on-p diode (open circles) under irradiation by 8.3 eV (150 nm) photons. The normalized responsivity is shown as a function of exposure. The stability of an AXUV diode under irradiation with 140 eV photons is shown additionally: initial performance (solid line) and after two years of storage in air (dashed line) and under vacuum (dotted line).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 5| Part 3| May 1998| Pages 866-868
https://doi.org/10.1107/S0909049597014076
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