Figure 1
(a) Power distribution of a silicon crystal at a glancing angle of 3.2° as a function of crystal thickness at BL08W of SPring-8. AP, HP, Cb, Ct, Rb and Rt are absorbed power, pure heat power, Compton backscattered power, Compton transmitted power, Rayleigh backscattered power and Rayleigh transmitted power, respectively (AP = HP + Cb + Ct + Rb + Rt). (b) Power deposition rate (kW mm−2) as a function of the distance from the crystal surface. |