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Figure 4
(a) Simulation results using the Takagi–Taupin equations for various radii of curvature for the Si 400 reflection at 110 keV with the (x, y) coordinate system used in the calculation, where [ \it t] is the crystal thickness. A beam width of 1 mm, constant intensity profile and [\Sigma] polarization are assumed. (b) Integrated intensity of the reflectivity curves as a function of bending radius derived from the results of (a).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 5| Part 3| May 1998| Pages 687-689
https://doi.org/10.1107/S0909049597018657
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