Ultrahigh-Vacuum Reaction Apparatus to Study Synchrotron-Radiation-Stimulated Processes

Hirano, S.; Yoshigoe, A.; Nagasono, M.; Mase, K.; Ohara, J.; Nonogaki, Y.; Takeda, Y.; Urisu, T.

doi:10.1107/S0909049598011534

Journal of Synchrotron Radiation Journal of
Synchrotron Radiation

IUCr IT WDC

home archive editors for authors for readers submit subscribe open access

view article

Figure 4
Depth profile of the etched pattern in SiO₂. The reaction gas was SF₆ (0.05 torr). The exposure dose of the synchrotron radiation irradiation was 1 × 10⁴ mA min. (a) An Al (thickness ∼38 nm) contact mask with 1 × 1 mm² opening was used. (b) A stainless steel (thickness 0.1 mm) contact mask with 1 × 1 mm² opening was used.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 5| Part 6| November 1998| Pages 1363-1368

https://doi.org/10.1107/S0909049598011534

Follow J. Synchrotron Rad.

Search IUCr Journals		doi		Advanced search
Author		volume	page