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Figure 7
IRRAS spectra measured after synchrotron-radiation-stimulated Si GS-MBE (A) and after the saturation adsorption of Si2H6 gas at 400 K (B). Synchrotron-radiation-stimulated Si GS-MBE was performed under an Si2H6 gas pressure of 1 × 10−3 torr, with a substrate temperature of 400 K and a synchrotron radiation dose of 3000 mA min. A CoSi2 BML substrate was used. Peaks a, b and c are assigned to SiH symmetric stretching, SiH2 scissoring and SiH3 symmetric deformation vibration modes, respectively.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 5| Part 6| November 1998| Pages 1363-1368
https://doi.org/10.1107/S0909049598011534
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