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Figure 8
IRRAS spectra after synchrotron-radiation-stimulated Si GS-MBE, with the synchrotron radiation beam irradiating the sample surface at an incidence angle of 45° (A), and without irradiation, i.e. with the synchrotron radiation beam parallel to the substrate surface (B). The GS-MBE conditions were the same as those of Fig. 7[link]. Peaks a, b and c are assigned to SiH symmetric stretching, SiH2 scissoring and SiH3 symmetric deformation vibration modes, respectively.

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