Figure 1
(a) Diffraction of 0.5° rotation obtained from a crystal of H50S soaked in 0.5 mM W30 (20" exposure) at ID13, ESRF. Resolution at the edge: 3.2 Å. (b) Diffraction of 0.5° rotation obtained from a T30S crystal at ID2, ESRF. Resolution at the edge: 3.5 Å. (c) A typical flat spatulum, with a mounted T30S crystal. The first position (marked a) was irradiated by a 65 µm beam at ID19, APS, and translated, once reaching 6 Å resolution (total 4°, 20 rotations. 0.2° each), to position b, where it was irradiated again. For clarity, position c was skipped, and at position d the crystal was exposed for only 15 s. Note that the intensities of the `burns' are proportional to the exposure time. These burns were used to indicate which parts of the crystal had been exposed and damaged by the beam. |