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Figure 6
Change in output bias level of the cascode amplifier for increasing radiation dose to the silicon oxide (SiO2) layer in the CMOS pixel electronics. A region of the chip was irradiated with 8.9 keV X-rays at a rate of 1–3 krad (SiO2) s−1 in sequential 100 ms periods. Background exposures were taken after each 100 ms radiation dose to monitor bias level shifts. The filled symbols show the bias level for an exposed region as a function of total accumulated dose. Clear effects can be seen after 30 krad. The open symbols show the bias level from an unexposed region in the same device (vertically offset by 1000 ADU for clarity).

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