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Figure 3
Three rocking curves enabling evaluation of strain relaxation, taken with Cu Kα1 radiation in double-crystal arrangements with a 511 Ge monochromator. (a) For symmetrical 400 reflection (nonparallel setting). (b) and (c) Two asymmetrical reflections with glancing angles [\Theta+\varphi] for an AlxGa1−xAs/GaAs epitaxic layer with x = 0.43 implanted with a dose of 1.8 × 1014 ions cm−2 of 1.5 MeV Se ions. In all three curves (a–c) the corresponding peaks from left to right are: from the implanted layer, from the non-penetrated part of the epitaxic layer, and from the substrate.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 7| Part 5| September 2000| Pages 318-325
doi:10.1107/S0909049500009420
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