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Figure 4
Bragg-case section topographs taken at large (50 cm) film-to-crystal distances for the silicon sample implanted with 1.6 MeV (right) and 1 MeV protons (left) with a dose of 1 × 1017 ions cm−2 of negligible curvature taken for (a) 242 reflection of 0.8 Å radiation and (b) [10_\prime6_\prime4] reflection of 0.36 Å radiation. The horizontal widths of the pictures are 7 mm.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 7| Part 5| September 2000| Pages 318-325
doi:10.1107/S0909049500009420
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