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Figure 2
Experimental setup. The back ion chamber (I1) is sensitive to the λ/3 Si(333) high-order reflection. The distance between the monochromator and the undulator is ∼28 m, which is typical for APS beamlines. |
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Figure 2
Experimental setup. The back ion chamber (I1) is sensitive to the λ/3 Si(333) high-order reflection. The distance between the monochromator and the undulator is ∼28 m, which is typical for APS beamlines. |