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Figure 15
Measured and calculated back-reflection section topograph of epitaxically laterally overgrown GaAs sample. e–e is the epitaxic layer, s–s is the substrate and w is the window. Bragg reflection is 026.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 9| Part 3| April 2002| Pages 174-178
doi:10.1107/S0909049502004284
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