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Figure 5
Plane-wave topographs of the CZ-Si wafer containing dislocations, taken at (a) 234 cm and (b) 13 cm from the sample, using the 111 reflection. |
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Figure 5
Plane-wave topographs of the CZ-Si wafer containing dislocations, taken at (a) 234 cm and (b) 13 cm from the sample, using the 111 reflection. |