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Figure 5
Double-crystal topograph of a GaAs sample with induced growth striations (grown by the vertical gradient freeze technique by J. Amon, B. Birkmann and G. Müller, Crystal Growth Laboratory, University of Erlangen, Germany), taken with a synchrotron double-crystal (n,−m) setup using a bendable perfect silicon monochromator [asymmetric 448 monochromator reflection (asymmetry angle α  = −17.6°) in the Bragg case, FWHM of the exit beam after the monochromator 0.31″, 880 sample reflection (Bragg case) with FWHM = 0.20″ on the high-angle flank of the rocking curve, E = 17.4 keV]. The projection of the incident wavevector is indicated by k∣∣.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 9| Part 5| August 2002| Pages 282-286
doi:10.1107/S0909049502010294
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