Ge quantum dots structural peculiarities depending on the preparation conditions

Erenburg, S.; Bausk, N.; Mazalov, L.; Nikiforov, A.; Yakimov, A.

doi:10.1107/S0909049503013980

Figure 1
Fourier transform magnitude of k³χ(k) Ge K EXAFS data at E||Si(001). Curve 1: pseudomorphous 4 ML two-dimensional films on Si(001). Curve 2: Ge nanoclusters on pseudomorphous 4 ML films on Si(001) with effective thickness equal to 6 ML, to 8 ML (curve 3) and to 10 ML (curve 4).

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 10| Part 5| August 2003| Pages 380-383

doi:10.1107/S0909049503013980

Follow J. Synchrotron Rad.

Search term		doi		Advanced search
Author		volume	page