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Figure 5
Variation of the photoluminescence yield at 10 K, in (a) KAlSi3O8 and (b) CaAl2Si2O8, when excitation is scanned across the fundamental L2,3 edges of K and Ca in the materials (optically detected XAS). The detailed structure is due to crystal-field splitting of the transitions, labelled after the work of deGroot et al. (1990 ![]() |