Figure 4
(a) The 2θ dependence of FWHM and (b) the d-spacing dependence of Δd/d approximated by the individual profile fit. (i) Si measured at λ = 1.20001 Å using a Ge(111) analyzer, (ii) LaB6 measured at λ = 0.63582 Å using receiving slits, (iii) LaB6 measured at λ = 0.63582 Å using a Ge(111) analyzer, (iv) Si measured at λ = 0.63582 Å using a Ge(111) analyzer, (v) Si measured at λ = 1.54960 Å using receiving slits. |