Figure 6
Worst-case estimation of the reconstruction distortions (in percent of the cellsize), appearing at two contemporaneous events. The X marks the impact position of the first event for which the distortion is determined: (a) in the cell centre; (b) at the centre of a low-resistivity cell border; (c) at a node. The absolute value of the expected distortions on the position of the first event X are plotted as a function of the impact position of the second event. The dashed contour lines correspond to a distortion of 2.5% of the cell size, i.e. 200 µm for a cell size of g = 8 mm. The ratio between high-resistivity cell centre and low-resistivity cell border amounts to 100. |