Figure 7
Reconstructed image of a flatfield illumination using (a) the simple four-node algorithm, (b) the four/six/three-node algorithm and (c) the four/six/three-node algorithm with subsequent non-linear correction mainly at the nodes and the cell borders. The flatfield shown has been recorded with a PCB-readout structure. Only the inner 5×5 cells corresponding to an area of 40 mm × 40 mm are depicted. A virtual pixel size of 200 µm × 200 µm has been chosen. All images contain about 4.6×106 photons (mean number of photons per pixel ). The standard deviation of the intensity per pixel distribution amounts to = 54.9 in image (a), to = 16.2 in image (b) and to = 13.6 in image (c). The Poisson limit amounts to σN-Poisson = 1141/2 ≃ 10.7. The black spot in the lower left-hand area (dotted circle) is caused by a defect region in one of the three GEM structures. The larger dark grey spot in the right-hand half of the image (dashed ellipse) can be attributed to an irregularity of the low-resistivity cell border. |