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Figure 3
Calculated transmitted and diffracted rocking curves for the GaAs 200 reflection with a crystal thickness of 133 µm and the temperature factor B = 0.64 A2 for (a) 10.3645 keV, (b) 10.5020 keV, (c) 11.3430 keV and (d) 11.8050 keV. (a), (b), (c) and (d) correspond to the resonant scattering conditions A, B, C and D, respectively, in Fig. 1[link]. Dotted lines correspond to the intensities given by the mean absorption coefficient ([\mu_0]) and broken lines correspond to the averaged values for the rocking curves with the Pendellösung beat. The inset circle denotes the diffraction condition in the (u, v) plane.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 11| Part 3| April 2004| Pages 266-271
doi:10.1107/S0909049504001992
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