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Figure 1
Simulation of the implant profile of a SiO2 glass implanted with 100 keV Cu+ ions at a fluence of 3×1016 atoms cm-2 and 210 keV Au+ ions at the same fluence. The simulation was made using the TRIM program (Biersack & Haggmark, 1980BB4). The projected range Rp and straggling Rs are Rp = 700 Å and Rs = 216 Å for Cu and Rp = 720 Å and Rs = 144 Å for Au.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 11| Part 3| April 2004| Pages 272-277
doi:10.1107/S0909049504002523
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