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Figure 4
Basic concepts for the readout electronics of Si drift-diodes. (a) Throughput rate in a paralyzable detector. (b) Degradation of the energy resolution owing to intrinsic and readout noises. (c) Electronic scheme including series and parallel noise sources. (d) Contribution of various noise sources to ENC as a function of the peaking time.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 12| Part 1| December 2005| Pages 57-69
doi:10.1107/S090904950402878X
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