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Figure 10
Simulation of the time-resolved strain in Ge assuming the strain was generated by ultrafast carrier diffusion. The beats at ∼3200 ps and ∼6500 ps are due to numerical artifacts. |
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Figure 10
Simulation of the time-resolved strain in Ge assuming the strain was generated by ultrafast carrier diffusion. The beats at ∼3200 ps and ∼6500 ps are due to numerical artifacts. |