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Figure 4
SEM image showing a silicon lens made using deep reactive ion etching. The aluminium etch mask is still present. Underetch and surface roughness is evident. The parameters for this lens are b = 40 µm, h = 10 µm, [\gamma] = 2.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 12| Part 3| April 2005| Pages 340-344
doi:10.1107/S0909049504034181
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