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Figure 5
(a) Geometry of the sample and the solid-state detector (SSD) for measuring the angle dependence of the fluorescence and scattered X-rays. The SSD makes an angle θ with the polarization vector of the incident X-ray beam. (b) Angle dependence of the fluorescence (white circles), X-ray resonant Raman scattering (squares) and elastic scattering intensity (black circles) from an Er-doped GaAs sample. The incident X-ray energy was fixed at 8.790 keV.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 12| Part 4| July 2005| Pages 494-498
https://doi.org/10.1107/S0909049505011003
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