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Figure 4
Difference Fourier map projected onto the (110) plane of γ-SiO2 at (a) ambient pressure and (b) 29.1 GPa. Contours are at intervals of 0.2 e A−3 and positive and negative contours are expressed by solid and broken lines, respectively. Residual valence electron density clearly shows the distribution around the cations and the bonding electron distribution on the Si—O bond.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 12| Part 5| August 2005| Pages 566-576
doi:10.1107/S0909049505022016
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