Figure 2
Absorption length in silicon as a function of X-ray energy. Note that the increasing importance of Compton and Rayleigh scattering at higher energies means that direct detection of X-rays in the device will become increasingly inefficient above 30 keV, even if the device could be made fairly thick. Calculations based on Cromer & Liberman (1981) and McMaster et al. (1969), using code based on Brennan & Cowan (1992). |