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Figure 7
Changes in the background levels of the HP 1.2 µm 100 × 92 and TSMC 0.25 µm 16 × 16 prototype detectors for increasing radiation dose. Dose is referred to the front of the diode detection layer. The 100 × 92 detector was irradiated with 8.9 keV X-rays while the 16 × 16 detector was dosed using 8 keV X-rays. The radiation-induced shift in background level is primarily due to gate oxide charging in transistors within the pixel electronics. For the 100 × 92 detector, clear damage effects can be seen below 1 Mrad. Significant improvement in the background stability can be seen for the 16 × 16 prototype manufactured using a 0.25 µm process along with an enclosed layout technique for transistors. (From Renzi, 2003BB26.)

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 13| Part 2| March 2006| Pages 110-119
https://doi.org/10.1107/S0909049505028529
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