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![[Figure 8]](gf0005fig8mag.jpg)
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Figure 8
Evolution of Cornell integrating PADs for large area coverage. (a) The 100 × 92 pixel prototype was manufactured using the HP 1.2 µm process (now phased out) with 150 µm pixel size. Maximum die size for that process was limited to 15 mm × 15 mm. (b) New detectors were manufactured using the TSMC 0.25 µm process, which allows a maximum die size of ∼21.5 mm × 21.5 mm. In addition to improved radiation tolerance, small fabrication feature sizes allowed 100 µm pixels, yielding a detector of 209 × 213 pixels. These detectors were designed to be three-side buttable, with wire bonds on the fourth side. (c) 8.8 cm × 2.2 cm monolithic detector array. Four of the detector modules described in (b) above are bonded to a single diode array yielding a detector which is 209 × 852 pixels. These monolithic 4 × 1 modules can be tiled to cover even larger areas. (d) Schematic of the detector described in (c) showing four CMOS readout chips bonded to a single large diode array. |
![[Figure 8]](gf0005fig8.jpg)
 | JOURNAL OF SYNCHROTRON RADIATION |
ISSN: 1600-5775
