view article
Figure 13
A schematic cross section through the pn-CCD along a transfer channel. The device is back illuminated and fully depleted over 300 µm thickness. The electron potential perpendicular to the wafer surface is shown on the right-hand side.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 13| Part 2| March 2006| Pages 99-109
https://doi.org/10.1107/S0909049506002214
Follow J. Synchrotron Rad.
Sign up for e-alerts
E-alerts
Follow J. Synchrotron Rad. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS