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Figure 3
STM image of a clean Si(111) surface with `on–off' switching of X-ray irradiation. The scan area was 20 nm × 20 nm with a sample bias of +2 V and a tunneling current of 0.3 nA. The inset shows a silhouette in the beam of diameter 200 µm. |
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Figure 3
STM image of a clean Si(111) surface with `on–off' switching of X-ray irradiation. The scan area was 20 nm × 20 nm with a sample bias of +2 V and a tunneling current of 0.3 nA. The inset shows a silhouette in the beam of diameter 200 µm. |