Crystallinity estimation of thin silicon-on-insulator layers by means of diffractometry using a highly parallel X-ray microbeam

Takeda, S.; Yokoyama, K.; Tsusaka, Y.; Kagoshima, Y.; Matsui, J.; Ogura, A.

doi:10.1107/S090904950602855X

Journal of Synchrotron Radiation Journal of
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Figure 4
Contour maps of the 004 diffraction intensity. The vertical axes gives the position of the silicon wafer. (a) Rocking curves for a 200 nm-thick bonded layer. (b) Rocking curves for a 200 nm-thick SIMOX layer.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 13| Part 5| August 2006| Pages 373-377

doi:10.1107/S090904950602855X

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