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Figure 5
EDD pattern from a perfect Si(hh0) crystal, when the ESRF storage ring has the 16-bunch fill pattern. Radiation from the ID15 wiggler has been used, and the scattering angle 2θ is 24.4°. The solid line gives the pile-up pattern calculated from the detecting system response model. The shaping time is as in Fig. 2[link] and the total count rate is 13000 counts s−1. Only a few of the maxima are due to the real Bragg reflections: 660 at about 46 keV, 880 at 61 keV and so on.

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