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Figure 6
EDD pattern from a Si perfect crystal in symmetrical Laue geometry (2θ = 12.2°), when the scattering vector passes through the reciprocal lattice points (2h,2h,0). The storage ring has the 1/3 fill pattern, the shaping time is 0.5 µs, the total count rate is 11000 counts s−1 and the acquisition time is 180 s. The whole spectrum on a logarithmic scale is given in the inset, and the high-energy part is given on a linear scale. The upper curve (solid line) shows the recorded energy spectrum, and the lower curve (dotted line) shows the spectrum as corrected for the effects of pile-up. Note the small escape peaks about 11 keV below the low-order reflection peaks.

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